Electron-Beam Lithography (Raith -150-TWO / E-line)

Electron beam column and optics:

• Electron source: Schottky field emitter ZrO/W.
• Beam energy range: 100 V to 30 kV in 10 V steps.
• Beam current range: 5 pA – 20 nA.
• Beam size (Gaussian beam):
  • 2 nm at 20 kV at 3 mm working distance.
  • nm at 1 kV at 3 mm working distance.

• Deflection system with writing field size range: from 0.5 µm up to 2 mm
• Laser interferometer controlled stage (res. 2 nm, repeatability <<50 nm)
• Aperture: 7 to 120 μm
• 20 MHz high speed pattern generation
• Automated height sensing
• Minimum feature size ≤ 20 nm.
• Possibility to pattern areas of up to 4” wafers