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Novel exotic forms of low-dimensional epitaxial Si, Ge, and Sn: silicene, its cousins, and related Xenes

Miércoles, 13 de Junio de 2018 - 12:00
Place: 
DIPC
Who: 
Guy Le Lay, PIIM-CNRS, Aix-Marseille University
Source Name: 
DIPC


Since its initial synthesis by epitaxy on Ag(111) in 2012, silicene1, the silicon analogue of graphene, but with a remarkable Quantum Spin Hall effect2, has attracted very strong interest, further boosting research on related elemental low-dimensional materials. Two-dimensional (2D) Kagome silicene with dumbbells3, germanene4 and stanene5, as well as pentagonal 1D Si nanoribbons6 and 0D nanodots6,7, with extraordinary characteristics, have been artificially created on different substrates.

The unique electronic properties of silicene have been soon exploited in ultra-thin planar devices: field-effect transistors with a monolayer silicene channel have been already fabricated in 20158.

In this seminar, I will present these realizations and draw perspectives for future research and potential applications.

1. P. Vogt et al., Phys. Rev. Lett. 108 155501 (2012).

2. C.-C. Liu, W. Feng, Y. Yao, Phys. Rev. Lett. 107 076802 (2011).

3. Y. Sassa et al., to be submitted.

4. M. E. Dávila et al.,  New Journal of Physics 16 095002 (2014).

5. J. Yuhara et al., 2D Materials 5 025002 (2018).

6. J. Cerdá et al., Nature Comm. 7 13076 (2016).

7. S. Sheng et al., Nano Lett. 18 2937 (2018).

8. L. Tao et al., Nature Nanotechnol. 10 227 (2015).

Host: Enrique Ortega

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